Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

Cu(In,Ga)Se2 thin films were prepared from aqueous solution by pulse electrodeposition. It was found that the co-deposition of the species occurred under a 3D growth with instantaneous nucleation. The morphology of the pulse-electrodeposited film can be improved by adjusting the duty cycle. The significant loss of indium and reduction of In-Se compound(s) accordingly were observed with decrease of duty cycle. Chalcopyrite structure Cu(In,Ga)Se2 films with p-type behavior and enhancement in crystallinity were obtained after annealing treatment in Ar atmosphere.