کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10656674 | 1005709 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Cu(In,Ga)Se2 thin films were prepared from aqueous solution by pulse electrodeposition. It was found that the co-deposition of the species occurred under a 3D growth with instantaneous nucleation. The morphology of the pulse-electrodeposited film can be improved by adjusting the duty cycle. The significant loss of indium and reduction of In-Se compound(s) accordingly were observed with decrease of duty cycle. Chalcopyrite structure Cu(In,Ga)Se2 films with p-type behavior and enhancement in crystallinity were obtained after annealing treatment in Ar atmosphere.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 509, Issue 8, 24 February 2011, Pages L129-L133
Journal: Journal of Alloys and Compounds - Volume 509, Issue 8, 24 February 2011, Pages L129-L133
نویسندگان
Fangyang Liu, Chun Huang, Yanqing Lai, Zhian Zhang, Jie Li, Yexiang Liu,