کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10666248 1007651 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of high-purity ternary carbide Ti3SiC2 by spark plasma sintering technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication of high-purity ternary carbide Ti3SiC2 by spark plasma sintering technique
چکیده انگلیسی
In this paper, polycrystalline bulk Ti3SiC2 samples were synthesized by spark plasma sintering (SPS) of TiC, Ti, Si, and Al powder mixtures. X-ray diffraction (XRD) and scanning electron microscope (SEM) were used for phase identification and microstructure evaluation. The results showed that addition of aluminum can considerably accelerate the synthesis reaction of Ti3SiC2 and fully dense, essentially single-phase polycrystalline Ti3SiC2 could be successfully obtained by sintering 2TiC/1Ti/1Si/0.2Al powders at 1250∼1300 °C. The process parameters in the sintering course revealed that addition of aluminum decreased the temperature for the synthesis reaction of Ti3SiC2. The density of the obtained Ti3SiC2 was 97.8% of the theoretical value. Also, it had Vickers hardness of 4 GPa (at 1 N and 30 s).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 59, Issue 12, May 2005, Pages 1547-1551
نویسندگان
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