A nonvolatile memory element based on a quaterthiophene field-effect transistor

Organic field-effect transistors were fabricated with Quaterthiophene (4T) as the active material and a ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited promising memory retention properties.