کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10668564 1008373 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Etching mechanisms during plasma jet machining of silicon carbide
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Etching mechanisms during plasma jet machining of silicon carbide
چکیده انگلیسی
Furthermore, etching experiments under sample heating have been carried out for different [CF4]/[O2] mixtures to obtain the activation energy of fluorine and oxygen with the surface. A minimum in the etching rate at a temperature of approximately 150 °C has been found. Therefore XPS and SEM analyses have been carried out for surfaces etched at sample temperatures of 25 °C, 150 °C and 400 °C showing an elevated fraction of silicon oxides and film thickness at 150 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S430-S434
نویسندگان
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