کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10668584 1008385 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photon-induced phonon excitation process as low-temperature nonequillibrium nano-surface modification of silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Photon-induced phonon excitation process as low-temperature nonequillibrium nano-surface modification of silicon
چکیده انگلیسی
A novel technique to achieve non-thermal annealing of implanted semiconductor dopants is proposed on the basis of photon-induced phonon excitation process as low-temperature nano-surface modification of semiconductors. The present approach is based on the concept that the energy required for re-crystallization and activation of the dopants is supplied to the dopant layer via nonequillibrium adiabatic process induced by ultra-short pulse laser irradiation at room temperature. Ultra-short pulse laser beam with a pulse duration of 100 fs has been used in the present study for investigations on phonon excitation features via pump-probe measurement of reflectivity and for demonstration of room-temperature re-crystallization and activation of ion-implanted silicon substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Issue 7, 25 December 2010, Pages 1826-1829
نویسندگان
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