کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10668584 | 1008385 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photon-induced phonon excitation process as low-temperature nonequillibrium nano-surface modification of silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A novel technique to achieve non-thermal annealing of implanted semiconductor dopants is proposed on the basis of photon-induced phonon excitation process as low-temperature nano-surface modification of semiconductors. The present approach is based on the concept that the energy required for re-crystallization and activation of the dopants is supplied to the dopant layer via nonequillibrium adiabatic process induced by ultra-short pulse laser irradiation at room temperature. Ultra-short pulse laser beam with a pulse duration of 100 fs has been used in the present study for investigations on phonon excitation features via pump-probe measurement of reflectivity and for demonstration of room-temperature re-crystallization and activation of ion-implanted silicon substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Issue 7, 25 December 2010, Pages 1826-1829
Journal: Surface and Coatings Technology - Volume 205, Issue 7, 25 December 2010, Pages 1826-1829
نویسندگان
Yuichi Setsuhara, Masaki Hashida,