کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10672594 | 1009919 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mapping of valence energy losses via energy-filtered annular dark-field scanning transmission electron microscopy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The advent of electron monochromators has opened new perspectives on electron energy-loss spectroscopy at low energy losses, including phenomena such as surface plasmon resonances or electron transitions from the valence to the conduction band. In this paper, we report first results making use of the combination of an energy filter and a post-filter annular dark-field detector. This instrumental design allows us to obtain energy-filtered (i.e. inelastic) annular dark-field images in scanning transmission electron microscopy of the 2-dimensional semiconductor band-gap distribution of a GaN/Al45Ga55N structure and of surface plasmon resonances of silver nanoprisms. In comparison to other approaches, the technique is less prone to inelastic delocalization and relativistic artefacts. The mixed contribution of elastic and inelastic contrast is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 109, Issue 9, August 2009, Pages 1164-1170
Journal: Ultramicroscopy - Volume 109, Issue 9, August 2009, Pages 1164-1170
نویسندگان
Lin Gu, Wilfried Sigle, Christoph T. Koch, Jaysen Nelayah, Vesna Srot, Peter A. van Aken,