کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674948 | 1010578 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Corrosion behavior of carbon-implanted zircaloy-4 in 1 M H2SO4
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Corrosion behavior of carbon-implanted zircaloy-4 in 1 M H2SO4 Corrosion behavior of carbon-implanted zircaloy-4 in 1 M H2SO4](/preview/png/10674948.png)
چکیده انگلیسی
In order to study the effect of carbon ion implantation on the aqueous corrosion behavior, samples of zircaloy-4 were implanted with carbon ions with fluences ranging from 1Â ÃÂ 1016 to 1Â ÃÂ 1017Â ions/cm2, using a metal vapor vacuum arc source (MEVVA) operated at an extraction voltage of 40Â kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES), respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the carbon ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zircaloy-4 in a 1Â M H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion behavior of zircaloy-4 implanted with carbon ions when the fluence is smaller than 5Â ÃÂ 1016Â ions/cm2. The higher the fluence, the worse is the corrosion resistance. Finally, the mechanism of the corrosion behavior of carbon-implanted zircaloy-4 was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 234, Issue 3, June 2005, Pages 235-242
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 234, Issue 3, June 2005, Pages 235-242
نویسندگان
D.Q. Peng, X.D. Bai, F. Pan, F. Sun, B.S. Chen,