کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10706023 | 1023285 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature rise in crystals subjected to ultrasonic influence
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature rise in crystals subjected to ultrasonic influence Temperature rise in crystals subjected to ultrasonic influence](/preview/png/10706023.png)
چکیده انگلیسی
The nonuniform temperature distribution in the surface of Hg1âxCdxTe semiconductor crystals during ultrasonic excitation was detected. This phenomenon was associated with a sonic-stimulated temperature rise around dislocations and a macroscopic heating of nonperfect regions. The dislocation moving in an ultrasonic field was considered as a linear thermal source and the temperature distribution around the dislocation was calculated. The discrete distribution of thermal sources is realised for Hg1âxCdxTe solid solutions at the average dislocation density â¼1010Â mâ2. The model of the sonic-stimulated activation of internal sources of the infrared radiation was proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 46, Issue 5, June 2005, Pages 388-393
Journal: Infrared Physics & Technology - Volume 46, Issue 5, June 2005, Pages 388-393
نویسندگان
R.K. Savkina, A.B. Smirnov,