Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal-organic chemical vapor deposition

► Ga2O3 films have been prepared on MgO (110) substrates by MOCVD. ► The epitaxial relationship is β-Ga2O3(2¯04) ‖MgO (110) with Ga2O3 [010]‖ MgO [001]. ► Twofold domain structure exists inside the film. ► The average transmittance of the films in the visible wavelength range exceeded 90%.