Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase

► The growth of 3C-SiC layers onto silicon substrate by VLS transport was investigated. ► A SiGe alloy was used as the liquid phase. ► Different ways of liquid localization were tested. ► Nucleation of SiC from the liquid phase requires using a 3C-SiC seeding layer. ► For the best conditions, epitaxial 3C-SiC trapezoidal islands were formed.