کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10707325 1023644 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range
چکیده انگلیسی
We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485 °C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423 °C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 250-253
نویسندگان
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