کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707400 | 1023647 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals](/preview/png/10707400.png)
چکیده انگلیسی
A set of global heat transfer simulations in Czochralski (Cz) furnace for producing silicon single crystals have been performed to investigate the effect of crystal and crucible rotations on melt convection and crystal/melt interface shape. The 2D axisymmetric simulations are carried out taking into account radiative and conductive heat transfers between furnace components, melt convection including thermocapillary forces (Marangoni) and gas flow. Melt flow pattern and temperature distribution have been studied for several combinations of crystal and crucible rotations and for different crystal heights. The result shows that crystal/melt interface shape and melt flow regime are strongly sensitive to the rate of rotations of both crystal and crucible. Interfaces with low deflection can be achieved for certain combinations of crystal and crucible rotation rates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 173-177
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 173-177
نویسندگان
Omidreza Asadi Noghabi, Mohammed M'Hamdi, Moez Jomâa,