کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10707442 1023647 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mechanism and modeling of silicon carbide formation and engulfment in industrial silicon directional solidification growth
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Mechanism and modeling of silicon carbide formation and engulfment in industrial silicon directional solidification growth
چکیده انگلیسی
This paper proposes a mechanism of carbon species formation and transport in the gas phase and silicon carbide particle formation and engulfment in the liquid phase. A numerical model considering various forces acting on silicon carbide particles is developed to quantify particle transport and particle engulfment. Numerical simulations are conducted to study fluid flow and temperature distribution in an industrial directional solidification system and particle distribution in the solidified silicon. Strategies to reduce carbon contamination and improve ingot quality are proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 313-317
نویسندگان
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