کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10707472 1023647 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics
چکیده انگلیسی
We studied numerically the fluid dynamics of the silicon melt in the high temperature solution growth of silicon carbide (SiC) with the presence of alternative magnetic fields. A 2D-axisymmetric model for 2 in SiC crystal growth was used for this study. The results revealed that the melt convection is strongly affected by the coil position and the applied frequency. Results on the effect of electromagnetic convection in the presence of buoyancy convection are also given in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 385-388
نویسندگان
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