کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707583 | 1023748 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of large niobium-doped MoSe2 single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation and characterization of large niobium-doped MoSe2 single crystals Preparation and characterization of large niobium-doped MoSe2 single crystals](/preview/png/10707583.png)
چکیده انگلیسی
Chemical vapor transport (CVT) process with bromine as a transporting agent has been utilized for growing large-size MoSe2 single crystals by adding niobium dopant (nominal concentration â¼0.5%) during the growth process. The maximum-size crystals are about 10Ã10Â mm2 in surface area and 2Â mm in thickness. The large edge plane facilitates an easier study of the influence of crystal anisotropy on the electrical and optical properties of the layered crystals. Anisotropy of the conductivity and indirect band gap parallel and perpendicular to the crystal c-axis due to the interlayer van der Waals interaction and red shift of the indirect and direct band gaps due to doping have been measured. It is found that the electrical and optical properties of niobium-doped MoSe2 are almost similar to those of the pure MoSe2 single crystal apart from a drastic reduction in the conductivity anisotropy and red shift of the band gap.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issue 3, 1 December 2005, Pages 408-414
Journal: Journal of Crystal Growth - Volume 285, Issue 3, 1 December 2005, Pages 408-414
نویسندگان
S.Y. Hu, C.H. Liang, K.K. Tiong, Y.C. Lee, Y.S. Huang,