The effect of deposition temperature and RF power on the electrical and physical properties of the MgTiO3 thin films

MgTiO3 thin films were grown on Si(1 0 0) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the RF power and substrate temperature. The electrical properties were measured using capacitance-voltage and current-voltage measurements on metal-insulator-semiconductor (MIS) capacitor structures. At a Ar/O2 ratio of 100/0, RF power of 400 W and substrate temperature of 400 °C, the MgTiO3 films with 6 μm thickness possess a dielectric constant of 16.2 (f=10MHz), a leakage current density of 10−9 A/mm2.