Excitons in cylindrical GaAs-Ga1−xAlxAs quantum dots under applied electric field

The exciton binding energy and photoluminescence energy transition in a GaAs-Ga1−xAlxAs cylindrical quantum dot are studied with the use of the effective mass approximation and a variational calculation procedure. The influence of these properties on the application of an electric field along the growth direction of the cylinder is particularly considered. It is shown that for zero applied field the binding energy and the photoluminescence energy transition are decreasing functions of the quantum dot radius and height. Given a fixed geometric configuration, both quantities then become decreasing functions of the electric field strength as well.