کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714226 | 1025576 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections](/preview/png/10714226.png)
چکیده انگلیسی
Comparisons of the experimental and calculated X-ray diffraction profiles have been made for Si nanowires with trapezoidal cross-sections. Examined samples are periodically arranged nanowires prepared on a silicon-on-insulator wafer by electron-beam lithography, so that they are isolated from Si substrate. The nanowire periodicity gives rise to diffractions at additional reciprocal lattice points, which we employ to avoid the mixture of the diffraction from the Si substrate. The experimental diffraction profiles are found to be in good agreement with the square modulus of the Fourier transform of the trapezoidal cross-sections determined from transmission electron micrographs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 13, 1 July 2011, Pages 2559-2564
Journal: Physica B: Condensed Matter - Volume 406, Issue 13, 1 July 2011, Pages 2559-2564
نویسندگان
Teruaki Takeuchi, Kosuke Tatsumura, Iwao Ohdomari, Takayoshi Shimura, Masao Nagase,