کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714245 | 1025576 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Role of carbon in the formation of hard Ge1âxCx thin films by reactive magnetron sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have deposited germanium carbide (Ge1âxCx) films on Si(1Â 0Â 0) substrate via radio-frequency (RF) reactive magnetron sputtering in a CH4/Ar mixture discharge, and explored the effects of carbon content (x) on the chemical bonding and hardness for the obtained films. We find that x significantly influences the chemical bonding, which leads to a pronounced change in the hardness of the film. To reveal the relationship between the chemical bonding and hardness, first-principles calculations have been carried out. It is shown that as x increases from 0 to 0.33, the fraction of sp3 C-Ge bonds in the film increases at the expense of Ge-Ge bonds, which promotes formation of a strong covalently bonded network, and thus enhances the hardness of the film. However, as x further increases from 0.33 to 0.59, the fraction of sp3 C-Ge bonds in the film gradually reduces, while that of sp3 C-H and graphite-like sp2 C-C bonds increases, which damages the compact network structure, resulting in a sharp decrease in the hardness. This investigation suggests that the medium x (0.17
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 13, 1 July 2011, Pages 2658-2662
Journal: Physica B: Condensed Matter - Volume 406, Issue 13, 1 July 2011, Pages 2658-2662
نویسندگان
Chaoquan Hu, Liang Qiao, Hongwei Tian, Xianyi Lu, Qing Jiang, Weitao Zheng,