کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714294 | 1025584 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots](/preview/png/10714294.png)
چکیده انگلیسی
In this paper, the electronic structure of an asymmetric self-assembled vertically coupled quantum dots heterostructure has been investigated. The structure consists of two ellipsoidal quantum dot (QDs) caps made with InAs embedded in a wetting layer InAs and surrounded by GaAs. Using the strain dependent k·p theory, the energy of the two lowest states of a single electron/hole which is confined within the coupled QD structure has been calculated. As a result, it can be estimated the energy gap for different geometry parameters and for tuning the external magnetic field. The numerical results show that the energy gap is very sensitive to the size asymmetry of the structure and to the small separation distance of the dots but less sensitive to the existence of an external magnetic field and large interdot distance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 7, 1 April 2012, Pages 1157-1160
Journal: Physica B: Condensed Matter - Volume 407, Issue 7, 1 April 2012, Pages 1157-1160
نویسندگان
V.N. Stavrou,