کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714327 | 1025585 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes](/preview/png/10714327.png)
چکیده انگلیسی
The optical joint densities of states of three InGaN/GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 22, 15 November 2011, Pages 4300-4303
Journal: Physica B: Condensed Matter - Volume 406, Issue 22, 15 November 2011, Pages 4300-4303
نویسندگان
Yu-Shou Wang, Nai-Chuan Chen, Chun-Yi Lu, Jenn-Fang Chen,