کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10714360 1025586 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation
چکیده انگلیسی
The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density Jsc, open circuit voltage Voc, conversion efficiency η and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at Ec-Et=0.18 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 9, 15 April 2011, Pages 1773-1777
نویسندگان
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