کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714384 | 1025587 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system](/preview/png/10714384.png)
چکیده انگلیسی
Oxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS2+Ga2O3 (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351Â nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 23, 1 December 2011, Pages 4381-4386
Journal: Physica B: Condensed Matter - Volume 406, Issue 23, 1 December 2011, Pages 4381-4386
نویسندگان
A.C. Mendes, L.J.Q. Maia, S.H. Messaddeq, Y. Messaddeq, S.J.L. Ribeiro, M. Siu Li,