کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714406 | 1025587 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of ion irradiation on optoelectronic properties of Ba0.12Sr0.88SO4: Eu phosphor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of ion irradiation on optoelectronic properties of Ba0.12Sr0.88SO4: Eu phosphor Effect of ion irradiation on optoelectronic properties of Ba0.12Sr0.88SO4: Eu phosphor](/preview/png/10714406.png)
چکیده انگلیسی
Nanocrystalline Ba0.12Sr0.88SO4 phosphor doped with Eu at 0.1Â mol% optimum concentration was prepared by the chemical co-precipitation method. X-ray diffraction study of the prepared sample suggests the orthorhombic structure with an average grain size of 62Â nm. The band gap was found to be 4.3Â eV. The samples were irradiated with 1.2Â MeV argon ions at fluences varying between 1011 and 1015Â ions/cm2, i.e. in the dose range of 59Â kGy to 590Â MGy. A prominent photoluminescence (PL) emission peak is seen around 376Â nm due to transition from an excited state 4f65d to 8S7/2 state of Eu2+ ions. The broadening of bands in FTIR spectrum at 1110, 990, 643 and 617Â cmâ1 is an evidence of the generation of SO4â, SO3â, SO2â, Oâ, etc. radicals after ion irradiation. The effect of ion irradiation on luminescence properties was studied.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 23, 1 December 2011, Pages 4483-4488
Journal: Physica B: Condensed Matter - Volume 406, Issue 23, 1 December 2011, Pages 4483-4488
نویسندگان
A. Choubey, S.K. Sharma, S.P. Lochab, T. Shripathi,