Influences of defects and Sb valence states on the temperature dependent conductivity of Sb doped SnO2 thin films

Temperature dependent conductivities, surface morphologies, defects and antimony valence state of antimony doped tin oxide (ATO) films were investigated. Much higher conductivity is found for the film calcined at 600 °C than 400 °C due to enhancement of Sb5+ ratio and removal of grain boundaries, vacancies and interstitial dopants; the conductivity increases slightly for the film calcined at 800 °C because of further elimination of vacancy clusters and grain boundaries. A strong temperature dependent conductivity is merely observed in the film calcined at 400 °C Positron annihilation parameter W is well correlated with the conductivity for ATO films.