Effect of annealing temperature on the characteristics of Pt/CH3NH3PbI3 contact

In this manuscript, Pt/CH3NH3PbI3 contacts annealing at different temperature are carried out, and the effects of annealing temperature on metal-semiconductor contacts are measured with the model of rectangular transmission line (TLM). It is found that the Pt/CH3NH3PbI3 contact characteristics are complicated as Pt deposited, but at 50 °C or higher, it shows good Omhic characteristics and the contact resistivity of Pt/CH3NH3PbI3 is about 3.4 × 10−4 Ω·cm2. As the temperature reached 100 °C, the Pt/CH3NH3PbI3 contact features begin to deteriorate due to the decomposition of perovskites proved by the XRD and SEM.