The effect of Zn doping on CdO thin films grown by SILAR method at room temperature

In this study, undoped and 0.3%, 1.7% and 4.5% Zn doped CdO thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on the soda lime glass substrate at room temperature. X-ray diffractometer (XRD), ultraviolet-visible spectrometer, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), Raman and Photoluminescence (PL) spectrometer measurements of the samples were taken to observe how the Zn doping effects on the structural, optical and morphological properties of CdO. XRD measurements show that the samples have the cubic structure. It was observed that calculated by the absorption measurements band gaps varied from 1.62 eV to 2.66 eV with changing Zn dopant in the CdO structure. It was observed that the samples surface morphologies were affected by Zn-doping and its rate. The Raman spectra of undoped and Zn doped CdO thin films were observed that 288 cm−1, 557 cm−1, 937 cm−1. The PL spectrum showed that the PL intensity increases with Zn doping in CdO. The PL spectra showed that Zn ions were located in the structure of CdO.