Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C

Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 89, October 2018, Pages 266-272

Oleg Babchenko, Gabriel Vanko, Michal Gerboc, Tibor Ižák, Marian Vojs, Tibor Lalinský, Alexander Kromka,