کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11011023 | 1803578 | 2019 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing temperature on morphology and structure of CuO nanowires grown by thermal oxidation method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuO nanowires were prepared by thermal oxidation methods from copper substrates. Morphology of CuO nanowires, i.e. diameter, length could be controlled by varying annealing temperature in the thermal oxidation process. The diameters of CuO nanowires ranged from 30â¯nm to more than 100â¯nm and the lengths were up to several microns. The obtained nanowires were characterized with Xray diffraction measurement, scanning electron microscopy, and Raman spectroscopy. The XRD results shows that CuO nanowires had monoclinic structure while position and width of Raman A1g peaks of the samples were closely related to size and density of the nanowires. Growth mechanism of CuO nanowires were suggested based on the energy dispersive spectroscopy and scanning electron microscope images.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 505, 1 January 2019, Pages 33-37
Journal: Journal of Crystal Growth - Volume 505, 1 January 2019, Pages 33-37
نویسندگان
Thi Ha Tran, Manh Hong Nguyen, Thi Huyen Trang Nguyen, Vu Phuong Thao Dao, Phuong Mai Nguyen, Viet Tuyen Nguyen, Nguyen Hai Pham, Van Vu Le, Cong Doanh Sai, Quang Hoa Nguyen, Trong Tam Nguyen, Khac Hieu Ho, Quoc Khoa Doan,