کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016417 | 1777112 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance-reliability trade-offs in short range RF power amplifier design
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, trade-offs between performance and reliability in CMOS RF power amplifiers at the design stage are studied. The impact of transistor sizing, amplifier class and on-chip matching network design are explored for a 130â¯nm technology and the implications of design decisions in transistor gate oxide reliability are discussed and projected. A strong trade-off is observed between efficiency and reliability, mainly for different on-chip output matching architectures. A comparison between two example designs is performed via SPICE simulations that include reliability models and the effects of aging on the stress conditions of each amplifier.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 38-42
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 38-42
نویسندگان
S.M. Pazos, F.L. Aguirre, F. Palumbo, F. Silveira,