کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016448 | 1777112 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction
ترجمه فارسی عنوان
همبستگی کمی بین فلش و ترانزیستور معادل برای استخراج پارامترهای الکتریکی استقامتی
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
Nowadays, the study of physical mechanisms that occur during Flash memory cell life is mandatory when reaching the 40â¯nm and beyond nodes in terms of reliability. In this paper we carry out a complete experimental method to extract the floating gate potential evolution during the cell aging. The dynamic current consumption during a Channel Hot Electron operation for a NOR Flash is a proper quantitative marker of the cell degradation. Here both drain and bulk currents are measured and monitored throughout the endurance tests. We coupled these characteristics with quasi-static measurements to correlate the cell degradation with an equivalent transistor. The final goal is to be able to split the physical effects of repetitive hot carrier and Fowler-Nordheim operations, typical of Flash memories, to extract the electrical parameters evolution on a simple equivalent transistor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 159-163
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 159-163
نویسندگان
V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, P. Chiquet, M. Bocquet,