کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016452 | 1777112 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of DC/AC stress on the reliability of cell capacitor in DRAM
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of DC/AC stress on the reliability of cell capacitor in DRAM Effect of DC/AC stress on the reliability of cell capacitor in DRAM](/preview/png/11016452.png)
چکیده انگلیسی
The influence of DC and AC stress on leakage current Ileak of cell capacitor was analyzed. Experimental results indicated that DC stress induced the asymmetric damage of cell capacitor and increase of Ileak due to the increase of trap assisted emission electron, AC stress induced the damage on both nodes of capacitor and increase of Ileak due to formation of tunneling path in dielectric when AC stress was applied. At stress voltage VD1â¯â¥â¯2.1â¯V, lifetime under AC stress was much worse that under DC stress, but the guaranteed voltage under AC stress at 10â¯years was twice as large as that under DC stress due to the difference of acceleration constant factor between DC and AC. As these results, the increase of Ileak under DC stress should be considered more important than that of AC stress for reliability estimation of cell capacitor as operating voltage decreases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 179-182
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 179-182
نویسندگان
Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee,