کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11029447 | 1646512 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical transport effects in YBCO/LSMO bilayer junctions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The electrical transport effects in interfaces of high TC superconducting and ferromagnetic thin film bilayer structures (YBa2Cu3Ox/La0.67Sr0.33MnO3 junctions with areas of â¼0.2â¯Ãâ¯10â4â¯cm2 and â¼1.21â¯Ãâ¯10â4â¯cm2) were investigated in view of the importance of such structures for oxide electronics and spintronics applications. In some structures the junction resistance Rj, measured by a standard four probe method at Tâ¯<â¯TC, can be significantly lower (even a few orders) than the real interface resistance Rif because of which a wrong interpretation of the last may occur. We show how to evaluate the right interface resistance and the real Rif was determined from the measurement of RJ for the above two junctions. An unordinary effect - a “change” of the sign of the I-V characteristics in dependence on the current I0 flowing across the bilayer junction was observed in our experiments. We explained the essence of the effect and quantitatively described the effect using a model, proposed in the paper. The conditions for observation of a “negative” value of RJ at Tâ¯>â¯TC were discussed as well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 324-331
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 324-331
نویسندگان
T. Nurgaliev, V. Å trbÃk, N. Gál, Å . Chromik, M. Sojková,