کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11262882 | 1803578 | 2019 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (<105â¯cmâ2) can result in enhanced defect formation. Chemo-mechanical polishing (CMP) of bulk AlN using colloidal silica sol can produce locally disturbed surface with SiOx residuals. These surface disturbances lead to generation of threading dislocations (â¼108â¯cmâ2) in homoepitaxially grown AlN layers. These dislocations show a tendency to form nano- and even micropipes, which may be associated with oxygen accumulation along the dislocation lines. As result, the subsequently grown AlGaN-based layer structures exhibit a high number of v-pits and micropipes. Inductively coupled plasma etching of AlN substrate surface prior to MOVPE growth results in clean AlN surfaces and improves the AlGaN layer quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 505, 1 January 2019, Pages 69-73
Journal: Journal of Crystal Growth - Volume 505, 1 January 2019, Pages 69-73
نویسندگان
A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, R.-S. Unger, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann,