Ion beam induced amorphization and bond breaking in Zn2SiO4:Eu3+ nanocrystalline phosphor

This paper reports on the ionoluminescence (IL) of Zn2SiO4:Eu3+ nanophosphors bombarded with 100 MeV Si7+ ions with fluences in the range (3.91–21.48) × 1012 ions cm−2. The prominent IL emission peaks recorded at 580, 590, 612, 650 and 705 nm are attributed to the luminescence centers activated by Eu3+ ions. It is observed that IL intensity decreases and saturates with increase of Si7+ ion fluence. Fourier transform infrared (FT-IR) studies confirm surface/bulk amorphization for a fluence of (3.91–21.48) × 1013 ions cm−2. These results show degradation of SiO (2ν3) bonds present on the surface of the sample and/or due to lattice disorder produced by dense electronic excitation under heavy ion irradiation. These results are discussed in detail.

Ionoluminescence spectra of Zn2SiO4:Eu3+ irradiated with 100 MeV Si7+ heavy ions at a fluence of 11.71 × 1012 ions cm−2.Figure optionsDownload as PowerPoint slideHighlights
► Ionoluminescence properties of Zn2SiO4:Eu3+ is reported for the first time.
► Amorphization and bond breaking in Zn2SiO4:Eu3+ is studied.
► An attempt is made to study the mechanism involves in light emission.