کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1235227 | 968843 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical, electrical and dielectric properties of TiO2–SiO2 films prepared by a cost effective sol–gel process Optical, electrical and dielectric properties of TiO2–SiO2 films prepared by a cost effective sol–gel process](/preview/png/1235227.png)
Titanium dioxide (TiO2) and silicon dioxide (SiO2) thin films and their mixed films were synthesized by the sol–gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO2 and SiO2 respectively. The pure and composite films of TiO2 and SiO2 were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO2 and SiO2 sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO2 films on p-silicon (1 0 0) substrates. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 °C for their possible use in optoelectronic applications.
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► Pure and composite films of TiO2 and SiO2 were deposited on glass and Si-substrates.
► MOS capacitors were fabricated using TiO2 films on p-silicon (1 0 0) substrates.
► Optical, electrical, dielectric properties have been investigated.
► The studies suggest that it is suitable for use in optoelectronic applications.
Journal: Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy - Volume 83, Issue 1, December 2011, Pages 614–617