Flexible organic transistors on standard printing paper and memory properties induced by floated gate electrode

• Employ screen-printed gate, source and drain electrodes for transistor fabricated on cellulose fiber substrate.
• Investigate the memory properties of the DNTT transistor with floated gate electrode.
• Study the ultra-flexible bending property in the OFETS developed on paper substrate.
• Demonstrate the feasibility to fabricate OFETs on typical printing paper without pre-treatment or using planarization layer.

Integrating electronic devices with unconventional substrate has been a popular research direction. Among these substrates, cellulose fiber paper has advantages in low-cost, recyclable and bio-degradable. We demonstrated directing printing of all contact electrodes on standard untreated Fuji Xerox printer paper without using planarization layer. The screen-printed gate electrodes based on silver nanoparticles can smooth out the paper substrate surface by two orders of magnitude and allow us to use parylene and DNTT as the dielectric and active layer directly. The transistors show average mobility of 0.297 cm2 V−1 s−1 and on/off ratio larger than 105. The low leakage current allows us to demonstrate memory properties by employing the floated gate method. The devices show excellent memory retention time for more than 10,000 s. The unique flexibility and combustibility of the organic transistors on paper substrate manifest their applications as next generation of green electronics.

Figure optionsDownload as PowerPoint slide