کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264094 | 972103 | 2011 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: High mobility short-channel p-type organic transistors with reduced gold content and completely gold-free source/drain bottom contacts High mobility short-channel p-type organic transistors with reduced gold content and completely gold-free source/drain bottom contacts](/preview/png/1264094.png)
Pure gold layers are traditionally used for the fabrication of source/drain bottom contacts of high performance short channel pentacene transistors. In this work, these layers are successfully replaced by low cost metallic bilayers, consisting of a thick aluminum layer with a good electrical conductivity covered by a thin noble metal layer (gold or palladium) providing good charge injection into the organic semiconductor. Corresponding pentacene transistors with 5 μm channel length achieve saturation mobilities in the range of 0.4–0.5 cm2/(V s), comparable to those of reference pentacene transistors based on 30 nm thick pure gold bottom contacts, but for a metal cost down to 5% of that of the reference transistors.
Pure gold layers of traditional source/drain bottom contacts of high performance short channel pentacene transistors are successfully replaced by low cost metallic bilayers, consisting of a thick aluminum layer covered by a thin noble metal layer (gold or palladium). Corresponding pentacene transistors with 5 μm channel length achieve saturation mobilities comparable to those of transistors based on 30 nm thick pure gold bottom contacts (0.4-0.5 cm2/(Vs)), but for a metal cost down to 5% of that of the reference transistors.Figure optionsDownload as PowerPoint slideHighlights
► Short channel pentacene transistors with metallic bilayer S/D bottom contacts.
► S/D bottom contacts of 5 nm thin gold or palladium on 25 nm thin aluminum.
► Large pentacene grains at the bottom contact/dielectric interface.
► Hole transport saturation mobilities above 0.4 cm2/(V s) for 5 μm short channels.
► S/D bottom contact metal costs decreased down to 5% of the reference transistor.
Journal: Organic Electronics - Volume 12, Issue 7, July 2011, Pages 1227–1235