Hybrid dual gate ferroelectric memory for multilevel information storage

• Demonstrated p-type ferroelectric memory with high hole mobility of 2.7 cm2 V−1 s−1.
• Hybrid polymer-oxide memory devices fabricated at low temperatures below 200 °C.
• Non-volatile ferroelectric transistors with multi-bit storage capability.
• Four levels information storage from a single FeFET with good retention characteristics up to 3600 s.

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200 °C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V−1 s−1, large memory window of ∼18 V, and a low sub-threshold swing ∼−4 V dec−1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

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