Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

• Chemical n-type doping process for graphene using N2H4–H2O is demonstrated.
• This method modulates VCNP of graphene by adjusting the concentration of N2H4–H2O.
• Using the hydrazine-based doping method, complementary inverter is fabricated.

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4–H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

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