کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1268156 972396 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Charge trapping in organic transistor memories: On the role of electrons and holes
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Charge trapping in organic transistor memories: On the role of electrons and holes
چکیده انگلیسی

In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 10, Issue 7, November 2009, Pages 1252–1258
نویسندگان
, , , , ,