Wetting and reaction promoted by ultrasound between sapphire and liquid Al–12Si alloy

Ultrasonic-assisted wetting between sapphire bulks and liquid Al–12Si alloy in an atmospheric environment at 620 °C is carried out in this study. Complete, rather than partial, wetting and joining can be achieved with the aid of ultrasound. Growth of epitaxial alumina on sapphire bulks is promoted dramatically during ultrasonic-assisted wetting comparing to that during hot-dipping without ultrasound. XRD results show that the epitaxial alumina is non-crystalline. This indicates that the temperature on the surface of the sapphire substrate is not more than 1200 °C even though the collapse of acoustic cavitation bubbles could theoretically produce extremely high temperature. The bonding force at the interface between the Al–Si alloy and sapphire is strengthened because of the epitaxial alumina. The interfacial shear strength of sapphire/Al–Si alloy can reach as high as 60–65 MPa. The fracture morphology shows that cracks initiated at the interface between Si grains and the epitaxial alumina on sapphire. This result is especially useful for the joining of metals and ceramics.

► Al–12Si alloy wets sapphire in atmosphere with the aid of ultrasonic vibration.
► Ultrasonic wave leads to complete joining of liquid Al–12Si alloy and sapphire.
► Epitaxy growth on sapphire was promoted by ultrasonic vibration at 620 °C.