کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1270882 | 1497547 | 2012 | 7 صفحه PDF | دانلود رایگان |

Highly active ZnS-UV was obtained in situ from ZnS(en)0.5 hybrid during the hydrogen formation using a methanol–water solution under UV irradiation. X-ray diffraction patterns and UV spectroscopy for both ZnS-UV and ZnS-400 obtained from the calcination of the ZnS(en)0.5 hybrid showed similar structural and photophysical properties; however, the efficiency of the ZnS-UV semiconductor was 7 times higher (4825 μmol h−1 g−1) compared to the ZnS-400. The highest H2 production was obtained using a UV lamp of very low intensity (2.2 mW cm−1) and it is attributed to a quantum size effect caused by the slow elimination of ethylenediamine (en) in the structural ZnS layer during the UV irradiation.
The efficient ZnS-UV semiconductor generated in situ during the H2 production using methanol–water under UV irradiation.Figure optionsDownload as PowerPoint slideHighlights
► ZnS semiconductor can be generated in situ during the H2 production reaction.
► ZnS-UV and ZnS-400 showed similar structural and photophysical properties.
► The ZnS-UV is an efficient semiconductor using UV lamp of low intensity.
► The highest activity of the ZnS-UV is attributed to the quantum effect.
Journal: International Journal of Hydrogen Energy - Volume 37, Issue 22, November 2012, Pages 17002–17008