کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1274660 1497434 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The doping effect on the properties of zinc oxide (ZnO) thin layers for photovoltaic applications
ترجمه فارسی عنوان
اثر دوپینگ بر خواص لایه های نازک روی (اکسید روی) برای کاربردهای فتوولتائیک
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
چکیده انگلیسی


• We have elaborated thin layers of ZnO.
• We have implemented the technique of ultrasonic spray.
• We studied its properties by following its evolution for two deposit temperatures.
• We studied the effect of In and Cu on ZnO thin film.
• We studied effect of In and Cu on optical transmission and reflection of ZnO.

In this study, we experimentally elaborated Copper- and Indium-doped Zinc Oxide (Cu: ZnO and In: ZnO) thin films at different temperatures (T1 = 480 °C and T2 = 520 °C), the doping ratio were varied between 0% and 8%. Using a low cost solution-based chemical deposition, we have developed a ZnO thin film deposition process that offers fine-control of the surface morphology. It consists in spraying a volatile compound of the material to be deposited on a substrate maintained at high temperature to cause a chemical reaction in order to form at least one solid product. Therefore, the proposed ZnO doped layer is highly promising for applications for the next-generation solar cells.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 40, Issue 39, 19 October 2015, Pages 13685–13689
نویسندگان
, , , , ,