کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1277388 1497569 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On a heterostructure field-effect transistor (HFET) based hydrogen sensing system
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
On a heterostructure field-effect transistor (HFET) based hydrogen sensing system
چکیده انگلیسی

An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.


► Hydrogen sensing system is based on heterostructure field-effect transistor (HFET).
► Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor exhibits a high response at RT.
► A sensing system could display and alarm the hydrogen concentration quickly.
► Hydrogen sensing system has advantages of low cost, fast response, portable, and easy operations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 36, Issue 24, December 2011, Pages 15906–15912
نویسندگان
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