کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1278313 | 1497546 | 2012 | 11 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Fabrication of nano N-doped In2Ga2ZnO7 for photocatalytic hydrogen production under visible light Fabrication of nano N-doped In2Ga2ZnO7 for photocatalytic hydrogen production under visible light](/preview/png/1278313.png)
N-doped In2Ga2ZnO7 photocatalysts were fabricated by solid state reaction route. All the prepared photocatalysts were successfully characterised by PXRD, optical absorption spectra, SEM, TEM, XPS, BET surface area and photoresponse studies. The formation of In2Ga2ZnO7 was confirmed by the PXRD pattern. Optical absorption spectra showed that the visible light absorption of all the photocatalysts were enhanced by nitrogen doping. Among all the prepared photocatalysts, 1 wt% Pt loaded N-GaInZn-500 showed enhanced photocatalytic activity towards hydrogen evolution under visible light irradiation in presence of 10 vol% methanol solution as sacrificial agent. The excellent photocatalytic activity of N-GaInZn-500 is in agreement with N-content, bandgap energy, PL intensity and Surface area.
▶ N-doped In2Ga2ZnO7 prepared by solid state reaction method. ▶ Nitrogen played a key role for visible light activity of the investigated system. ▶ 1 wt% Pt loaded N-GaInZn-500 showed best activity for H2 evolution in visible light. ▶ The PL intensity, bandgap energy and surface area control photocatalytic activity.
Journal: International Journal of Hydrogen Energy - Volume 37, Issue 23, December 2012, Pages 17936–17946