کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1297504 1498403 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Defect properties of Ti-doped Cr2O3
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Defect properties of Ti-doped Cr2O3
چکیده انگلیسی

The defects in Cr2−xTixO3 (x = 0, 0.2 and 0.3) were studied by a combination of X-ray diffraction, density and electrical conductivity measurements supported by atomistic simulation. The results are consistent with the Ti being dissolved as Ti4+ compensated by Cr vacancies which associate to form complex defects of lower energy. Ti doping gives n-type semiconductivity due to a small concentration of Ti3+ in equilibrium with the complexes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 177, Issues 19–25, 15 October 2006, Pages 1767–1770
نویسندگان
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