کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1297713 | 1498347 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: High oxide-ion conductivity of monovalent-metal-doped bismuth vanadate at intermediate temperatures High oxide-ion conductivity of monovalent-metal-doped bismuth vanadate at intermediate temperatures](/preview/png/1297713.png)
Li- and Ag-doped Bi2VO5.5 were synthesized by solid-state reactions, and their high oxide-ion conductivities at intermediate temperatures between 400 and 600 °C were demonstrated. Li- and Ag-doped Bi2VO5.5 show a higher symmetry than Bi2VO5.5 at room temperature. In Bi2(V0.9Li0.1)O5.3 and Bi2(V0.9Ag0.1)O5.3, the tetragonal γ-phase, i.e., the high-temperature and disordered phase of Bi2VO5.5, is stabilized at room temperature. AC impedance spectroscopy reveals that Li- and Ag-doping markedly improve the electrical conductivity of Bi2VO5.5 below 570 °C. The dominant charge carrier is confirmed as oxide ions from impedance spectra, DC polarization measurements, and conductivity change with oxygen partial pressure. At around 500 °C, the oxide-ion conductivities of Li- and Ag-doped Bi2VO5.5 are 2−5 times higher than that of La0.8Sr0.2Ga0.8Mg0.115Co0.085O3, which is one of the best oxide-ion conductors.
Journal: Solid State Ionics - Volume 181, Issues 15–16, 3 June 2010, Pages 719–723