A comparison between micro-Raman spectroscopy and SIMS of beveled surfaces for isotope depth profiling

The diffusion in fast oxygen ion conductors is typically analyzed by isotope exchange experiments followed by secondary ion mass spectrometry (SIMS). This study demonstrates confocal Raman spectroscopy in combination with beveling of the specimen's surface as an interesting non-UHV alternative to SIMS. This simple and comparably inexpensive approach is shown to result in practically the same values for the diffusion properties as the SIMS technique. Thereby, the limitations of both techniques are compared for an easy understanding under which conditions they are applicable.