Electrical conductivity of manganese doped yttria (8 mol%) stabilized zirconia

• Electrical conductivity of 10 at.% manganese doped YSZ (Mn-YSZ) has been reported.
• Electrical conductivity of Mn-YSZ follows PO216 power law in 1–10− 5 atm PO2 range.
• The conductivity of Mn-YSZ remains unchanged and lower than YSZ in PO2PO2 ≤ 10− 6 atm.
• Multivalent manganese ions, lattice strain, and defects influence the conductivity.

Electrical conductivity of 10 at.% manganese doped yttria (8 mol%) stabilized zirconia (Mn-YSZ) has been investigated using electrochemical cell technique in 800–1000 °C and 1–10− 20 atm oxygen partial pressure (PO2)PO2 range. The electrical conductivity increases according to PO216 power law with increasing PO2PO2 in 1–10− 5 atm range, remains PO2PO2 independent in 10− 5–10− 15 atm range, and slightly decreases with decreasing PO2PO2 in 10− 15–10− 20 atm range. The deviation from PO214 power law is attributed to the presence of multivalent state of manganese ions in 1–10− 5 atm PO2PO2 range. The electrical conductivity of Mn-YSZ is lower than that of yttria stabilized zirconia in reducing atmosphere. At lower oxygen partial pressures, lattice strain, defect association, and electron trapping results in decreased electrical conductivity.